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                   BAS16LD All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 4 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] When switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR =1mA. [3] When switched from IF =10mA; tr =20ns. Table 7. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF =50mA --1V IF =150mA --1.25V IR reverse current VR =25V --30nA VR =80V --0.5μA VR=25V; Tj =150°C --30μA VR=80V; Tj =150°C --50μA Cd diode capacitance f = 1 MHz; VR =0V --1.5pF trr reverse recovery time [2] --4ns VFR forward recovery voltage [3] --1.75V |